X-ray diffraction (XRD)
What we can do
The XRD deployed by LF comes with XRR (thin film X-ray reflectivity) functions. The XRD tool is based on the diffraction principle and the XRR is the reflection pattern of XRD aimed at measuring film thickness (up to 0.1nm thick), roughness of the sample surface and layers interface, electronic density of film, and even perform multi-layer film analysis for a total thickness below 500nm. This makes it ideal for analyzing film material characteristics non-destructively.
What is XRD?

X-ray diffraction analysis (XRD), is designed to identify material crystal structure, crystal orientation, and grains size of nanometer crystal, as well as residual stress analysis of mono- and poly-crystalline film material by pairing the X-ray diffraction pattern of crystal against databases in a non-destructive manner.
The Superiority Of LF
- Crystal structure analysis (lattice)
- Crystallinity analysis
- Texture analysis
- Thin film residual stress analysis
- RSM (Reciprocal Space Mapping) analysis
- XRR analysis
- The smallest XRD spot resolution: 0.3mm
- High power and high strength X-ray source: 6kW
- Fixed-point pattern analysis: laser spot positioning
- Sample analysis dimension: available for 12″ wafer with 8″ movement scope
- Semiconductor Industry
- LED Industry
- Optoelectronics Industry
- Nanomaterials R&D
Bruker New D8 Discover
X-ray source | 6kW turbo X-ray spot size: 0.3*3mm |
Detector | LynxEye PathFinder |
Other functions | 2 bounce monochromator Ge (002) Laser alignment |

Case Sharing

Sample for analysis: Al2O3/Si
See figure below for results of fitting the XRR pattern of aluminum oxide films on silicon substrate. The table below suggests there are two layers of aluminum oxide films at different densities (the thickness is 0.94 nm and 6.69 nm for upper and lower layer respectively); roughness of aluminum oxide surface and the silicon substrate interface is 0.49 nm and 0.23 nm odd respectively.
Sample for analysis: InxGa1-xN/GaN superlattice
See below for a high resolution XRD pattern for the epitaxy of LED wafer. Fitting of superlattice InxGa1-xN/GaN suggests thickness and composition at 2.4nm/14.35nm and x=16.27%.
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