Secondary ion mass spectrometer(sims)
What we can do
In addition to doping concentration analysis the high mass resolving capacity of LF SIMS may be employed in P/N junction depth analysis and concentration analysis over trace elements in bulk material. To control the semiconductor/LED process parameter and maintain component / epitaxial stability. This makes it ideal for trace detection and analysis over semiconductor, LED and thin film material detection and analysis.
What is SEM?
Secondary Ion Mass Spectrometer (SIMS ), this mechanism executes quantitative analysis over micro contamination, doping, and ion implantation as well as junction diffusion behavior study with high resolution detection capacity based on the high sensitivity of ions. This makes it ideal for trace detection and analysis over semiconductor, LED and thin film material detection and analysis.
The Superiority Of LF
Analysis sample: semiconductor silicon wafer
See the chart below for the highest limit of iST SIMS device in terms of implanting concentration of arsenic (As) ions in semiconductor silicon wafer is analyzed. It tells the detection limit of SIMS may reach up to 0.2 ppba.
Depth profiling of As ions (N type) implanted in Si chips