Scanning Electron Microscope (SEM)
What we can do
Because the SEM has high resolution, the maximum magnification can reach over 100,000 times, and large depth of field, its primary use is in observing sample surface and cross section micro structure.
When the SEM tool is equipped with an Energy Dispersive Spectrometer (EDS), it can also be used to provide micro (region) material analysis of the sample surface. This includes qualitative, semi-qualitative element analysis and specific regional analysis of point, line scan & mapping.
What is SEM?

The Scanning Electron Microscope (SEM) uses optoelectronic system to focus electrons generated by an electronic gun onto a small spot on the sample surface. This beam of electrons will then interact with the sample material to generate secondary electrons, back scatter and signature X-Ray etc. A scan coil is then placed on sample surface to pick up those signals. The SEM works by collecting secondary electrons to form an image.
The Superiority Of LF
- Observation Of Material’s Surface Micro Structure.
- It Is Possible To Provide Precise Dimensional Measurement Such As Film Thickness
- EDS Can Provide Qualitative Or Semi-Qualitative Element Analysis Of The Surface Sample As Well As Point, Line Scan Or Mapping Analysis Of The Specified Region
- The SDD Detector Can Even Improve The Mapping Of Spatial Resolution Under Low Voltage.
- SEM Imaging With Layer Removal Technique (De-Process) Can Provide Useful Clue For Reverse Engineering Of Electrical Circuits.
- Using Low Energy Electron Beam For Passive Voltage Contrast (PVC) Can Point Out The Precise Location Of Electrical Leakage Or Bad Contact.
LF has multiple main stream Field-Emission SEM (FE-SEM):Thermo Fisher Verios 460L、Hitachi Regulus 8240、Hitachi SU8220、Hitachi SU8020、Hitachi S-4700、Jeol 6700F all equipped with EDS (SDD detector). Apart from providing the high resolution surface structure image, they are also capable of material composition analysis at a rapid pace.
Equipment Capacity

FEI verios460L | |
Electron gun | Schottky FE |
Resolution | 0.6nm (accelerating voltage 15kV) ,0.7nm(accelerating voltage 1kV) |
Magnification | 45~800k |
Accelerating voltage | 0.5~30kV |

HITACHI SU8020 | |
Electron gun | Cold FE |
Resolution | 1.0nm (accelerating voltage15kV) ,1.3nm(accelerating voltage 1kV) |
Magnification | 30~800k |
Accelerating voltage | 0.1~30kV |

HITACHI SU8220 | |
Electron gun | Cold FE |
Resolution | 0.8nm (accelerating voltage15kV) ,1.1nm(accelerating voltage1kV) |
Magnification | 20~1000k (vary with WD, HV) |
Accelerating voltage | 0.01~30kV |

JEOL 6700-F | |
Electron gun | Cold FE |
Resolution | 1.0nm (accelerating voltage 15kV) ,2.2nm(accelerating voltage 1kV) |
Magnification | 25~650k |
Accelerating voltage | 0.5~30kV |
Case Sharing







SEM image of liquid grinding material

This chip image by SEM; the one on the left side is mosaicked with 100 SEM photos; the one on the right is an enlarged part from the left which shows the nano-grade circuit image clearly.
With stacked delayer and SEM photo stitching, customers may view the relationship between individual metal layers with iST software.
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