Dual Beam FIB
What we can do
The Dual-Beam FIB Equipment is capable of simultaneously imaging the cross section by electron beams while cleaving the sample with ion beams. As well as performing the EDX composition analysis.
Dual-beam FIB is equipped with ultra-high resolution ion beams and electron beams, which can perform Nanoscale positioning and observation of fine structures in the sample. With an ion beam current up to 65nA and fast cutting speed, these new systems cut data access time effectively.
The Superiority Of LF
- Failure analysis of semiconductor components (14 Nm achievable)
- Anomaly analysis of semiconductor production lines
- Epitaxy and structural analysis of thin films
- Voltage contrast test
- TEM specimen preparation
- Nanoscale structure preparation
The H660 features excellent E-beam resolution for void and gate oxide of sizes up to 3nm (blue arrow marked) is identified clearly.