Atomic Force Microscopy (AFM)

What is AFM

AFM gives atom-scale resolution, forming a key means for studying surface of micro structures.
The main principle of AFM is to cause a micro displacement of the cantilever (which carries the probe) using the atomic forces between the probe tip and the sample, to map the topography of the sample. AFM is applicable to various material surface inspections.

The Superiority Of LF

Application

Superiority

Equipment Capacity

Application

Superiority

Equipment Capacity

	AFM	AFM profiler	CAFM	SCM
Analysis mechanism	Measure the surface structure and looks by atomic forces between the probe tip and sample	The probe applies voltage on its tip or sample to get the current strength at the sample surface	Get the differential of capacitance signals with a conductive probe, convert them into 2D doping image distribution
Analysis application	1. Material surface roughness measurement and structure observation 2. Material surface 2D/3D pattern image 3. Nanoscale depth analysis and dimensioning	1. Detect over resistance or current leakage 2. Identify P+/ N+ /Poly contact 3. Measure single point I-V curve	P-N type zone and border
Equipment specification	1. Sample dimension: (mm) 200 x 200 x 15 2. 300 mm x 300 mm (12″ wafer) Compatible 3. Analysis scope (um): 90 x 90 x 5	1. Sample dimension：300 mm x 300 mm (12″ wafer) Compatible 2. Maximun scanning range：50000 um	1. Magnification ratio: 107~1011 2. Bias voltage range: -10V~10V	1. Plane resolution: 20nm Doping concentration 2. Range: 1015~1019 atom/cm3 3. Scanning range: 90 * 90um / with height

AFM

AFM profiler

CAFM

SCM

Analysis mechanism

Measure the surface structure and looks by atomic forces between the probe tip and sample

The probe applies voltage on its tip or sample to get the current strength at the sample surface

Get the differential of capacitance signals with a conductive probe, convert them into 2D doping image distribution

Analysis application

1. Material surface roughness measurement and structure observation
2. Material surface 2D/3D pattern image
3. Nanoscale depth analysis and dimensioning

1. Detect over resistance or current leakage
2. Identify P+/ N+ /Poly contact
3. Measure single point I-V curve

P-N type zone and border

Equipment
specification

1. Sample dimension: (mm) 200 x 200 x 15

2. 300 mm x 300 mm (12″ wafer) Compatible

3. Analysis scope (um): 90 x 90 x 5

1. Sample dimension：300 mm x 300 mm (12″ wafer) Compatible

2. Maximun scanning range：50000 um

1. Magnification ratio: 107~1011

2. Bias voltage range: -10V~10V

1. Plane resolution: 20nm
Doping concentration

2. Range: 1015~1019 atom/cm3