Non-Taiko Grinding/Conventional Grinding (BGBM)
What we can do
The first step of the complete BGBM process is wafer thinning, grinding and etching wafers with thicknesses to 100um, then execute Backside Wet Etching to further thinning, roughen, and release stress from the surface.
During the backside grinding (BG) of wafer thinning process, fast and precise grind wafers with grinding wheel before micro etching their surfaces with etching solution to remove the damaged layers due to grinding and stress release.
The Superiority Of LF
Application
Superiority
Application
- Existing thickness options: ≧100um with thickness subject to customer requirements
- Applicable to 8″/6″ P- Or N-Type wafers
Superiority
- Employ fully automatic DISCO equipment for precisely controlled grinding.
- Provide wet bench and spin etching tools to perform rough or shining surface processes for N- or P-type wafers as required by customers.
- Far outperforms the dial gauge widely adopted by the industry with non-contact optical and high-precision measurement.
- A team of engineers with diversified experts including front end wafer foundry, wafer thinning and backend packaging house, knowledgeable and experienced in process integration and analysis in phases from front through middle to back and well-prepared to assist customers in accelerated development, troubleshooting, and mass production stabilization.
Wafer Thining/Non-Taiko Grinding Process
Taping wafers with tapes determined by wafer features and passivation layers by front end foundries after IQC; then, perform Non-Taiko Grinding / Conventional Grinding and Backside Wet Etching in sequence before thickness measurement and OQC.
IQC → Taping → Wafer Thinning / Non-Taiko Grinding → Backside Wet Etching → Thickness Measurement → OQC
Case Sharing
Wafers After Grinding and Etching
Wafers After Grinding and Etching
Post-etching wafers: surface roughened → Post-grinding wafers: clearly visible grinding marks
