Compared to EMMI, InGaAs is better in detecting “flaws of devices made by advanced processes” as devices of smaller size featuring lower operation voltage which, in turn, result in longer wavelength of photons triggered by hot carriers. This makes InGaAs perfect for hot spot positioning for products manufactured by advanced processes.
What is InGaAs EMMI?
The InGaAs EMMI and EMMI have the same principle and function the same way. Both detect photons are triggered by electron-electron hole reunion and hot carriers. They differ in that InGaAs has better sensitivity and may detect longer wave length range 900-1700nm (versus 350-1100nm of EMMI) which is the same wave length spectrum of IR.
The Superiority Of LF
The Superiority of LF
The Superiority of LF
LF equipped with double side Probe station to reduce the time and cost for sample preparation.
Case Sharing
InGaAs hot spot
EMMI V.S. InGaAs
InGaAs hot spot
EMMI V.S. InGaAs
Detection strength difference between EMMI and InGaAs over the same hot spots.
Application
InGaAs And EMMI Have Similar Applications But InGaAs Features More Advantages As Follows
Detects defects in a shorter period, 5 to 10 times shorter than EMMI.
Detects defects that EMMI is unable to detect (Also detects micro current leakage and defects of advanced processes).
It’s capable of detecting micro metal bridges.
IR lights benefits better penetration rate over silicon substrate for IC backside positioning analysis
Limited by lens rotation angles, a maximum of 4 probe manipulators (4 Probe tips) can be installed on the stage. Maximum height of sample: 10 cm. Requires totally-dark-chamber operation without the existence of light emitting devices.
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